STD7N65M2 Datasheet, PDF (7/17 Pages) STMicroelectronics – Extremely low gate charge

STD7N65M2
Electrical characteristics
Figure 8. Capacitance variations
C
(pF)
GIPG060820141238FSR
Figure 9. Output capacitance stored energy
Eoss
(μJ)
GIPG060820141302FSR
1000
100
2.4
Ciss
1.8
10
Coss
1.2
1
Crss
0.6
0.1
0.1
1
10
100 VDS(V)
Figure 10. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
1.1
ID=250μA
AM18065v1
0
0 100 200 300 400 500 600 VDS(V)
Figure 11. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.2
ID=2.5A
VGS=10V
AM18066v1
1.0
1.8
0.9
1.4
0.8
1.0
0.7
0.6
0.6
-75
25 0 25 75
125 TJ(°C)
0.2
-75
-25 0 25
75 125 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized V_(BR)DSS vs temperature
VSD (V)
1.1
GIPG060820141313FSR
TJ=-50°C
V(BR)DSS
(norm)
1.08
ID=1mA
AM18067v1
1
1.04
0.9
TJ=25°C
1.00
0.8
0.96
0.7
0.6
TJ=150°C
0.5
0
1
2
34
5 ISD(A)
0.92
0.88
-75
-25 0 25
75 125 TJ(°C)
DocID026787 Rev 2
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