STD7N65M2 Datasheet, PDF (1/17 Pages) STMicroelectronics – Extremely low gate charge

STD7N65M2
N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2
Power MOSFET in a DPAK package
Datasheet - production data
Features
TAB
3
1
DPAK
Figure 1. Internal schematic diagram
D(2, TAB)
G(1)
Order code
STD7N65M2
V_DS
R_DS(on)
max
I_D
650 V 1.15 Ω
5A
• Extremely low gate charge
• Excellent output capacitance (C_oss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the MDmesh™ M2 technology.
Thanks to the strip layout associated to an
improved vertical structure, the device exhibits
both low on-resistance and optimized switching
characteristics. It is therefore suitable for the most
demanding high efficiency converters.
S(3)
AM15572v1
Order code
STD7N65M2
Table 1. Device summary
Marking
Package
7N65M2
DPAK
Packaging
Tape and reel
May 2015
This is information on a product in full production.
DocID026787 Rev 2
1/17
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