STD7N65M2 Datasheet, PDF (6/17 Pages) STMicroelectronics – Extremely low gate charge

Electrical characteristics
STD7N65M2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
ID
GIPG060820141409FSR
(A)
Figure 3. Thermal impedance
10
1
0.1
0.01
0.1
1
10μs
100μs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
10
100 VDS(V)
Figure 4. Output characteristics
ID(A)
GIPG060820141159FSR
VGS=7, 8, 9, 10V
8
6V
6
Figure 5. Transfer characteristics
ID
(A)
VDS=20V
GIPG060820141210FSR
8
6
4
5V
4
2
4V
0
0
5
10 15
20 VDS(V)
2
0
0
2
4
6
8
VGS(V)
Figure 6. Gate charge vs gate-source voltage
VGS
(V) _VDS
12
VDD=520V
ID=5A
GIPG060820141216FSR
VDS
(V)
600
10
500
8
400
Figure 7. Static drain-source on-resistance
RDS(on)
(Ω)
1.04
VGS=10V
GIPG060820141221FSR
1.02
1.0
6
300
4
200
2
100
0
0
0
2
4
6
8 10 Qg(nC)
0.98
0.96
0.94
0.92
0
1
2
3
4
5 ID(A)
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