STD44N4LF6 Datasheet, PDF (7/15 Pages) STMicroelectronics – N-channel 40 V, 8.9 mΩ, 44 A DPAK STripFET™ VI DeepGATE™ Power MOSFET

STD44N4LF6
Electrical characteristics
Figure 8.
VGS
(V)
12
10
8
Gate charge vs gate-source voltage Figure 9. Capacitance variations
VDD=20V
ID=40A
AM08908v1
C
(pF)
1000
AM08909v1
Ciss
6
Coss
100
Crss
4
2
0
0
5 10 15 20 25 Qg(nC)
10
0
10
20
30 VDS(V)
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.2
1.0
ID=250µA
AM08910v1
RDS(on)
(norm)
2.0
VGS=10V
ID=20A
AM08911v1
0.8
1.5
0.6
0.4
0.2
0
-75 -25
25
75 125 TJ(°C)
1.0
0.5
0
-75 -25
25
75
125 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
VSD
(V)
1.0
TJ=-55°C
AM08912v1
0.8
TJ=25°C
0.6
TJ=175°C
0.4
0.2
0
0 5 10 15 20 25 30 35 40 ISD(A)
Doc ID 17171 Rev 4
7/15