STD44N4LF6 Datasheet, PDF (3/15 Pages) STMicroelectronics – N-channel 40 V, 8.9 mΩ, 44 A DPAK STripFET™ VI DeepGATE™ Power MOSFET

STD44N4LF6
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
Drain-source voltage (V_GS = 0)
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Derating factor
T_stg Storage temperature
T_j
Operating junction temperature
1. Pulse is rated according SOA
Table 3. Thermal resistance
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-pcb Thermal resistance junction-pcb max ⁽¹⁾
1. When mounted on 1 inch², 2 oz Cu.
Table 4. Avalanche data
Symbol
Parameter
I_AV
E_AS ⁽¹⁾
Not-repetitive avalanche current
Single pulse avalanche energy
1. Starting Tj = 25 °C, I_D = I_AV, V_DD = 24 V
Electrical ratings
Value
40
± 20
44
31
176
50
0.33
- 55 to 175
Unit
V
V
A
A
A
W
W/°C
°C
Value
3
50
Unit
°C/W
°C/W
Value
Unit
20
A
150
mJ
Doc ID 17171 Rev 4
3/15