STD44N4LF6 Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel 40 V, 8.9 mΩ, 44 A DPAK STripFET™ VI DeepGATE™ Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD44N4LF6
(T_CASE = 25 °C unless otherwise specified)
Table 5. Static
Symbol
Parameter
V_(BR)DSS
Drain-source breakdown
voltage V_GS= 0
I_DSS
Zero gate voltage drain
current (V_GS = 0)
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS(th) Gate threshold voltage
R_DS(on)
Static drain-source on
resistance
Test conditions
I_D = 250 µA
V_DS = 20 V
V_DS = 20 V,Tc = 125 °C
V_GS = ± 20 V
V_DS = V_GS, I_D = 250 µA
V_GS = 5 V, I_D = 20 A
V_GS = 10 V, I_D = 20 A
Min. Typ.
40
-
-
-
1
-
11.3
8.9
Max. Unit
V
1 µA
10 µA
±100 nA
2.5 V
18 _mΩ
12.5
Table 6. Dynamic
Symbol
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
R_G
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Intrinsic gate resistance
Test conditions
V_DS = 25 V, f=1 MHz,
V_GS = 0 V
V_DD = 20 V, I_D = 40 A
V_GS = 10 V
(see Figure 14)
f = 1 MHz open drain
Min Typ. Max. Unit
1190
pF
-
200
- pF
110
pF
22
nC
-
5
- nC
4.3
nC
-
3.1
-
Ω
Table 7. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD = 20 V, I_D = 20 A,
8.5
ns
-
-
45
ns
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 15)
30
-
8
ns
-
ns
4/15
Doc ID 17171 Rev 4