STD30NF04LT Datasheet, PDF (7/15 Pages) STMicroelectronics – N-channel 40 V, 0.03 typ., 30 A, STripFET II Power MOSFET in a DPAK package

STD30NF04LT
Electrical characteristics
Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations
VGS
(V)
VDS=20V
8
ID=30A
AM01462v1
C
(pF)
1200
f=1MHz
VGS=0
AM01463v1
6
900
Ciss
4
600
2
300
Coss
0
0
4
8
12
16 Qg(nC)
0
Crss
0
10
20
30
40 VDS(V)
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs.
vs. temperature
temperature
VGS(th)
(norm)
1.0
AM01464v1
VDS = VGS
ID = 250µA
RDS(on)
(norm)
2.2
ID=10A
VGS=10V
AM01465v1
0.9
1.8
0.8
1.4
0.7
1.0
0.6
-50
0
50
100
TJ(°C)
0.6
-50
0
50
100
TJ(°C)
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized BV_DSS vs. temperature
VSD
(V)
1.2
TJ=-55°C
AM01466v1
V(BR)DSS
(norm)
1.2
VGS=0
ID=250µA
AM01467v1
0.9
1.1
25°C
0.6
175°C
1.0
0.3
0.9
0
0
6
12
18
24 ^ISD(A)
0.8
-50
0
50
100
TJ(°C)
Doc ID 023954 Rev 1
7/15