STD30NF04LT Datasheet, PDF (3/15 Pages) STMicroelectronics – N-channel 40 V, 0.03 typ., 30 A, STripFET II Power MOSFET in a DPAK package

STD30NF04LT
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-source voltage (V_GS = 0)
V_GS
Gate- source voltage
I_D(1)
Drain current (continuous) at T_C = 25 °C
I_D
Drain current (continuous) at T_C = 100 °C
I_DM
Drain current (pulsed)
P_tot
Total dissipation at T_C = 25 °C
Derating factor
dv/dt ⁽²⁾ Peak diode recovery voltage slope
E_AS ⁽³⁾
Single pulse avalanche energy
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Current limited by package
2. I_SD ≤ 30 A, di/dt ≤ 300 A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
3. Starting T_j = 25 °C, I_D = 40 A, V_DD = 35 V
Value
40
± 20
30
21
120
50
0.33
12.5
340
-55 to 175
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb Thermal resistance junction-ambient max
Max value
3.0
see
Section 3 on page 8
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Unit
°C/W
°C/W
Doc ID 023954 Rev 1
3/15