STD30NF04LT Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 40 V, 0.03 typ., 30 A, STripFET II Power MOSFET in a DPAK package

STD30NF04LT
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min.
I_SD
I_SDM ⁽¹⁾
Source-drain current
Source-drain current
(pulsed)
-
V_SD ⁽²⁾ Forward on voltage
I_SD = 30 A, V_GS = 0
-
t_rr
Reverse recovery time I_SD = 30 A, di/dt = 100 A/µs,
Q_rr
Reverse recovery charge V_DD = 20 V, T_j = 150 °C
-
I_RRM Reverse recovery current (see Figure 16)
1. Pulse width limited by safe operating area.
2. Starting T_j = 25 °C, I_D = 40 A, V_DD = 35 V
Typ.
30
60
4
Max. Unit
30 A
120 A
1.5 V
ns
nC
A
Doc ID 023954 Rev 1
5/15