STD15N60M2-EP Datasheet, PDF (7/15 Pages) STMicroelectronics – Extremely low gate charge

STD15N60M2-EP
Figure 8: Static drain-source on-resistance
RDS(on)
(Ω)
VGS=10V
GIPG121220141431MT
0.360
0.350
0.340
0.330
0.320
0
2
4
6
8
10 ID(A)
Electrical characteristics
Figure 9: Normalized on-resistance vs
temperature
R_DS(on)
(norm)
GIPG181120141628ALS
2.2
1.8
V_GS = 10 V
1.4
1.0
0.6
0.2
-75
-25
25
75
125 T_J(°C)
Figure 10: Gate charge vs. gate-source
voltage
VGS
(V)
12
VDD=480V
ID=11A
GIPG121220141425MT
VDS
(V)
600
10 ^VDS
500
8
400
6
300
4
200
2
100
0
0
0
4
8
12
16
Qg(nC)
Figure 11: Capacitance variations
C
(pF)
GIPG121220141441MT
1000
Ciss
100
Coss
10
1
Crss
0.1
0.1
1
10
100 VDS(V)
Figure 12: Turn-off switching loss vs drain
current
Eoff
(µJ)
GIPG121220141453MT
5.4
VDD=400V, RG=4,7Ω,V_GS=10V
5.2
5
4.8
4.6
4.4
0.5 1 1.5 2 2.5 3 3.5 ID(A)
Figure 13: Source-drain diode forward
characteristic
VSD(V)
GIPG161220141014MT
1.1
TJ=-50°C
1
0.9
TJ=25°C
0.8
TJ=150°C
0.7
0.6
0.5
0
2
4
6
8 10 ISD(A)
DocID027308 Rev 1
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