STD15N60M2-EP Datasheet, PDF (1/15 Pages) STMicroelectronics – Extremely low gate charge

STD15N60M2-EP
N-channel 600 V, 0.340 Ω typ., 11 A MDmesh™ M2 EP
Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code
STD15N60M2-EP
VDS @
TJmax
650 V
RDS(on)
max.
0.378 Ω
ID
11 A
DPAK
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
 Extremely low gate charge
 Excellent output capacitance (COSS) profile
 Very low turn-off switching losses
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
 Tailored for very high frequency converters
(f > 150 kHz)
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to its strip
layout and an improved vertical structure, the
device exhibits low on-resistance, optimized
switching characteristics with very low turn-off
switching losses, rendering it suitable for the
most demanding very high frequency converters.
S(3)
Order code
STD15N60M2-EP
AM01476v1_tab
Table 1: Device summary
Marking
15N60M2EP
Package
DPAK
Packaging
Tube
December 2014
DocID027308 Rev 1
This is information on a product in full production.
1/15
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