STD15N60M2-EP Datasheet, PDF (4/15 Pages) STMicroelectronics – Extremely low gate charge

Electrical characteristics
STD15N60M2-EP
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 5: On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage Drain
current
VGS = 0 V, VDS = 600 V
VGS = 0 V, VDS = 600 V,
TC = 125 °C
IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source on-
resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5.5 A
Min. Typ. Max. Unit
600
V
1 µA
100 µA
±10 µA
2
3
4
V
0.340 0.378 Ω
Symbol
Parameter
Ciss Input capacitance
Coss
Output
capacitance
Crss
Reverse transfer
capacitance
Coss eq.⁽¹⁾
Equivalent output
capacitance
RG
Intrinsic gate
resistance
Qg Total gate charge
Qgs
Gate-source
charge
Qgd Gate-drain charge
Table 6: Dynamic
Test conditions
VDS= 100 V, f = 1 MHz, VGS = 0 V
VDS = 0 to 480 V, VGS = 0 V
f = 1 MHz, ID = 0 A
VDD = 480 V, ID = 11 A, VGS = 10 V
(see Figure 15: "Gate charge test
circuit")
Min. Typ. Max. Unit
- 590 - pF
-
30
-
pF
- 1.1 - pF
-
148 - pF
-
7
-
Ω
-
17
-
nC
- 3.1 - nC
- 7.3 - nC
Notes:
(1)_{Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS}
increases from 0 to 80% VDSS
Symbol
Parameter
Table 7: Switching energy
Test conditions
E(off)
Turn-off energy
(from 90% VGS to 0% ID)
VDD = 400 V, ID = 1.5 A
RG = 4.7 Ω, VGS = 10 V
VDD = 400 V, ID = 3.5 A
RG = 4.7 Ω, VGS = 10 V
Min. Typ. Max. Unit
- 4.7
-
µJ
- 5.2
-
µJ
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