STCH02 Datasheet, PDF (7/24 Pages) STMicroelectronics – Offline PWM controller for ultra-low standby adapters

STCH02
Device description and block diagram
Symbol
Table 5. Electrical characteristics
(Tj = - 25° to 125 °C, V_DD = 14 V, unless otherwise specified)
Parameter
Test condition
Min. Typ. Max. Unit
High voltage start-up generator
V_HV
I_LEAKAGE
H_VSTART
HV voltage
HV leakage current
HV start voltage
I_CHARGE V_DD start-up charge current
V_DD-FOLD V_DD foldback threshold
Supply voltage
V_DD
V_DD-ON
V_DD-OFF
Operating range
Turn-on threshold
Restart threshold
V_DD-UVLO UVLO threshold
V_DDR V_DD restart voltage (falling)
V_Z
V_Z clamping voltage
Supply current
I_Q
I_DD
I_DD-FAULT
Quiescent current
Operating supply current
Fault quiescent current
Start-up timer and frequency limit
T_START
F_LIM
Start timer period
Internal frequency limit
Zero current detector
I_ZCDb
V_ZCDH
V_ZCDL
V_ZCDA
V_ZCDT
Input bias current
Upper clamp voltage
Lower clamp voltage
Arming voltage
Triggering voltage
T_BLANK
Trigger blanking time after MOSFET's
turn-on
I_HV < 2 µA, Tj = 25 °C
V_HV = 400 V, Tj = 25 °C
650 V
1 µA
40 50 60 V
V_HV > HV_START; V_DD  0.6 V or
after protection tripping
0.3
0.6
0.9
mA
V_HV > HV_START;
2 < V_DD < V_DDOn
4.5 7 10.3
V_HV > HV_START
1
2
V
After turn-on
V_FB > V_FBF
V_FB > V_FBF
V_FB < (0.6 - 65 mV)
After protection tripping
In burst mode
I_DD = 20 mA
11.5
23 V
12 13 14 V
9 10 11 V
8.55 9.5 10.45 V
6.75 7.5 8.25 V
4.5
V
3.2
23
26.5 V
Burst operation
C_out = 1 nF, f_sw = 100 KHz
During hiccup
190 230 µA
2.3 2.7 mA
330 420 µA
220
µs
260
kHz
V_ZCD = 0.1 to 2.7 V
I_ZCD = 1 mA
I_ZCD = - 1 mA
Positive-going edge
Negative-going edge
V_FB 1.65 V
V_FB = 0.6 V
1 µA
3
V
-60
mV
80 110 140 mV
40 60 80 mV
3.8
µs
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