STB18NM80 Datasheet, PDF (7/21 Pages) STMicroelectronics – N-channel 800 V, 0.25 Ω, 17 A, MDmes Power MOSFET

STB18NM80, STF18NM80, STP18NM80, STW18NM80
Electrical characteristics
Figure 8. Output characteristics
ID
(A)
40
VGS=10V
35
30
7V
25
20
15
10
6V
5
0
5V
0
5
10
15
20 VDS(V)
Figure 9.
ID
(A)
40
Transfer characteristics
VDS=20V
35
30
25
20
15
10
5
0
0
2
4
6
8
10 VGS(V)
Figure 10. Normalized B_VDSS vs temperature
BVDSS
(norm)
1.06
I_D=1mA
Figure 11. Static drain-source on-resistance
RDS(on)
(Ω)
0.28
VGS=10V
1.03
1.00
0.98
0.26
0.24
0.95
0.22
0.92
-50 -25 0 25 50 75 100 TJ(°C)
0.2
0
5
10
15 ID(A)
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
VGS
(V)
12
10 ^VDS
8
6
4
2
VDD=640V
ID=17A
700
VGS
600
500
400
300
200
100
C
(pF)
100000
10000
1000
100
10
Crss
Ciss
Coss
0
0
0
20
40
60
80 Qg(nC)
1
0.1 1
10 100 1000 VDS(V)
Doc ID 15421 Rev 5
7/21