STB18NM80 Datasheet, PDF (1/21 Pages) STMicroelectronics – N-channel 800 V, 0.25 Ω, 17 A, MDmes Power MOSFET

STB18NM80, STF18NM80,
STP18NM80, STW18NM80
N-channel 800 V, 0.25 Ω, 17 A, MDmesh™ Power MOSFET
in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet — production data
Features
Order codes
V_DSS
R_DS(on)
max
I_D
STB18NM80
STF18NM80
STP18NM80
STW18NM80
800 V
800 V
800 V
800 V
< 0.295 Ω
< 0.295 Ω
< 0.295 Ω
< 0.295 Ω
17 A
17 A ⁽¹⁾
17 A
17 A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
These N-channel Power MOSFETs are
developed using STMicroelectronics’
revolutionary MDmesh™ technology, which
associates the multiple drain process with the
company's PowerMESH™ horizontal layout.
These devices offer extremely low on-resistance,
high dv/dt and excellent avalanche
characteristics. Utilizing ST’s proprietary strip
technique, these Power MOSFETs boast an
overall dynamic performance which is superior to
similar products on the market.
3
1
D²PAK
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STB18NM80
STF18NM80
STP18NM80
STW18NM80
Marking
18NM80
Package
D²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
May 2012
This is information on a product in full production.
Doc ID 15421 Rev 5
1/21
www.st.com
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