STB18NM80 Datasheet, PDF (3/21 Pages) STMicroelectronics – N-channel 800 V, 0.25 Ω, 17 A, MDmes Power MOSFET

STB18NM80, STF18NM80, STP18NM80, STW18NM80
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS Drain-source voltage
V_GS Gate-source voltage
Drain current (continuous) at
I_D
T_C = 25 °C
I_D
I_DM ⁽²⁾
Drain current (continuous) at
T_C = 100 °C
Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
V_ISO
Insulation withstand voltage (RMS)
from all three leads to external heat
sink (t = 1 s;T_C = 25 °C)
T_stg Storage temperature
T_j Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
Value
Unit
TO-220 D²PAK TO-247 TO-220FP
800
V
± 30
V
17
17 ⁽¹⁾
A
10.71
68
190
10.71⁽¹⁾
A
68 ⁽¹⁾
A
40
W
2500
V
-65 to 150
°C
150
°C
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case
R_thj-amb Thermal resistance junction-amb
R_thj-pcb Thermal resistance junction-pcb
T_l
Maximum lead temperature for
soldering purpose
Value
Unit
TO-220 D²PAK TO-247 TO-220FP
0.66
62.5
50
30
3.13
°C/W
62.5
°C/W
°C/W
300
°C
Table 4. Avalanche characteristics
Symbol
Parameter
I_AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
E_{AS (starting Tj = 25 °C, ID = IAS, VDD = 50 V)}
Max value
Unit
4
A
600
mJ
Doc ID 15421 Rev 5
3/21