M36L0R7040T0 Datasheet, PDF (7/18 Pages) STMicroelectronics – 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package

M36L0R7040T0, M36L0R7040B0
It is not allowed to set E_F at V_IL, E1_P at V_IL and E2_P
at V_IH at the same time.
PSRAM Write Enable (W_P). The Write Enable
input controls writing to the PSRAM memory array.
W_P is active low.
PSRAM Output Enable (G_P). The Output En-
able gates the outputs through the data buffers
during a Read operation of the PSRAM memory.
G_P is active low.
PSRAM Upper Byte Enable (UB_P). The Upper
Byte Enable input enables the upper byte for
PSRAM (DQ8-DQ15). UB_P is active low.
PSRAM Lower Byte Enable (LB_P). The Lower
Byte Enable input enables the lower byte for
PSRAM (DQ0-DQ7). LB_P is active low.
V_DDF Supply Voltage. V_DDF provides the power
supply to the internal cores of the Flash memory
component. It is the main power supply for all
Flash operations (Read, Program and Erase).
V_DDP Supply Voltage. V_DDP provides the power
supply to the internal core of the PSRAM device. It
is the main power supply for all PSRAM opera-
tions.
V_DDQ Supply Voltage. V_DDQ provides the power
supply for the Flash Memory I/O pins. This allows
all Outputs to be powered independently of the
Flash Memory core power supply, V_DDF.
V_PPF Program Supply Voltage. V_PPF is both a
Flash control input and a Flash power supply pin.
The two functions are selected by the voltage
range applied to the pin.
If V_PPF is kept in a low voltage range (0V to V_DDQ)
V_PPF is seen as a control input. In this case a volt-
age lower than V_PPLKF gives an absolute protec-
tion against Program or Erase, while V_PPF > V_PP1F
enables these functions (see Tables 6 and 7, DC
Characteristics for the relevant values). V_PPF is
only sampled at the beginning of a Program or
Erase; a change in its value after the operation has
started does not have any effect and Program or
Erase operations continue.
If V_PPF is in the range of V_PPHF it acts as a power
supply pin. In this condition V_PPF must be stable
until the Program/Erase algorithm is completed.
V_SS Ground. V_SS is the common ground refer-
ence for all voltage measurements in the Flash
(core and I/O Buffers) and PSRAM chips.
Note: Each Flash memory device in a system
should have their supply voltage (V_DDF) and
the program supply voltage V_PPF decoupled
with a 0.1µF ceramic capacitor close to the pin
(high frequency, inherently low inductance ca-
pacitors should be as close as possible to the
package). See Figure 6., AC Measurement
Load Circuit. The PCB track widths should be
sufficient to carry the required V_PPF program
and erase currents.
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