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M36L0R7040T0 Datasheet, PDF (1/18 Pages) STMicroelectronics – 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package | |||
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M36L0R7040T0
M36L0R7040B0
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory
and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
FEATURES SUMMARY
â MULTI-CHIP PACKAGE
â 1 die of 128 Mbit (8Mb x16, Multiple Bank,
Multi-level, Burst) Flash Memory
â 1 die of 16 Mbit (1Mb x16) Pseudo SRAM
â SUPPLY VOLTAGE
â VDDF = VDDP = VDDQ = 1.7 to 1.95V
â VPP = 9V for fast program (12V tolerant)
â ELECTRONIC SIGNATURE
â Manufacturer Code: 20h
â Device Code (Top Flash Configuration)
M36L0R7040T0: 88C4h
â Device Code (Bottom Flash
Configuration) M36L0R7040B0: 88C5h
â PACKAGE
â Compliant with Lead-Free Soldering
Processes
â Lead-Free Versions
FLASH MEMORY
â SYNCHRONOUS / ASYNCHRONOUS READ
â Synchronous Burst Read mode: 54MHz
â Asynchronous Page Read mode
â Random Access: 85ns
â SYNCHRONOUS BURST READ SUSPEND
â PROGRAMMING TIME
â 10µs typical Word program time using
Buffer Program
â MEMORY ORGANIZATION
â Multiple Bank Memory Array: 8 Mbit
Banks
â Parameter Blocks (Top or Bottom
location)
â DUAL OPERATIONS
â program/erase in one Bank while read in
others
â No delay between read and write
operations
â SECURITY
â 64 bit unique device number
â 2112 bit user programmable OTP Cells
Figure 1. Package
FBGA
TFBGA88 (ZAQ)
8 x 10mm
â BLOCK LOCKING
â All blocks locked at power-up
â Any combination of blocks can be locked
with zero latency
â WPF for Block Lock-Down
â Absolute Write Protection with VPP = VSS
â COMMON FLASH INTERFACE (CFI)
â 100,000 PROGRAM/ERASE CYCLES per
BLOCK
PSRAM
â ACCESS TIME: 70ns
â LOW STANDBY CURRENT: 110µA
â DEEP POWER DOWN CURRENT: 10µA
December 2004
1/18
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