STM32F103VET6 Datasheet, PDF (67/130 Pages) STMicroelectronics – High-density performance line

STM32F103xC, STM32F103xD, STM32F103xE
Electrical characteristics
Table 33. Asynchronous multiplexed PSRAM/NOR read timings⁽¹⁾⁽²⁾ (continued)
Symbol
Parameter
Min
Max
Unit
t_{h(BL_NOE)} FSMC_BL hold time after FSMC_NOE high
0
ns
t_{v(BL_NE)}
FSMC_NEx low to FSMC_BL valid
0
ns
t_{su(Data_NE)} Data to FSMC_NEx high setup time
2t_HCLK + 24
ns
t_{su(Data_NOE)} Data to FSMC_NOE high setup time
2t_HCLK + 25
ns
t_{h(Data_NE)} Data hold time after FSMC_NEx high
0
ns
t_{h(Data_NOE)} Data hold time after FSMC_NOE high
0
ns
1. C_L = 15 pF.
2. Based on characterization, not tested in production.
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