STD2NK70Z_06 Datasheet, PDF (6/16 Pages) STMicroelectronics – N-channel 700V - 6Ω - 1.6 A - DPAK/IPAK Zener protected SuperMESH™ Power MOSFET

Electrical characteristics
STD2NK70Z - STD2NK70Z-1
Table 7. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM(1)
V_SD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=1.6A, V_GS=0
I_SD=1.6A,
di/dt = 100A/µs,
V_DD=50V, Tj=25°C
(see Figure 16)
I_SD=1.6A,
di/dt = 100A/µs,
V_DD= 50V, Tj=150°C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
1.6 A
6.4 A
1.6 V
334
ns
918
µC
5.5
A
350
ns
1050
µC
6
A
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