STD2NK70Z_06 Datasheet, PDF (3/16 Pages) STMicroelectronics – N-channel 700V - 6Ω - 1.6 A - DPAK/IPAK Zener protected SuperMESH™ Power MOSFET

STD2NK70Z - STD2NK70Z-1
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
I_D
I_DM(1)
P_tot
Drain-source voltage (V_GS = 0)
Drain-gate voltage (R_GS = 20 kΩ)
Gate- source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating factor
V_ESD(G-S)
dv/dt ⁽²⁾
Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ)
Peak diode recovery voltage slope
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. I_SD ≤1.6A, di/dt ≤200A/µs, V_DD ≤V_(BR)DSS, Tj ≤T_JMAX
Value
700
700
± 30
1.6
1
6.4
45
0.36
2000
4.5
55 to 150
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
2.78
Rthj-amb Thermal resistance junction-ambient max
100
T_J
Maximum lead temperature for soldering purpose
300
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
°C/W
°C/W
°C
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_AS
(pulse width limited by Tj Max)
Single pulse avalanche energy
E_AS
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
Unit
1.6
A
110
mJ
3/16