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| STD2NK70Z_06 Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 700V - 6Ω - 1.6 A - DPAK/IPAK Zener protected SuperMESH™ Power MOSFET | |||
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Electrical ratings
STD2NK70Z - STD2NK70Z-1
Table 4. Gate-source zener diode
Symbol
Parameter
Test Condition
Min.
BVGSO
Gate-source
breakdown voltage
Igs= ± 1mA (open drain) 30
Typ.
Max Unit
A
1.1
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the deviceâs ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the deviceâs
integrity. These integrated Zener diodes thus avoid the usage of external components.
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