STB34NM60N Datasheet, PDF (6/17 Pages) STMicroelectronics – Low gate input resistance

Electrical characteristics
STB34NM60N, STP34NM60N
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
ID
AM15706v1
(A)
Tj=150°C
Tc=25°C
Single pulse
100
Figure 3. Thermal impedance
10µs
10
100µs
1ms
10ms
1
0.1
0.1
1
10
100 VDS(V)
Figure 4. Output characteristics
ID(A)
80
VGS=10V
AM09020v1
70
60
6V
50
40
30
20
5V
10
0
0 5 10 15 20 25 30 VDS(V)
Figure 6. Gate charge vs gate-source voltage
VGS
(V)
12 ^VDS
VDD=480V
ID=31.5A
AM15701v1
VDS (V)
500
10
400
8
300
6
200
4
2
100
0
0
0
20
40
60
80
Qg(nC)
Figure 5. Transfer characteristics
ID (A)
80
70
V_DS=20V
AM09021v1
60
50
40
30
20
10
0
0
2
4
6
8
VGS(V)
Figure 7. Static drain-source on-resistance
RDS(on)
(Ω)
0.096
VGS=10V
AM15702v1
0.094
0.092
0.09
0.088
0.086
0 5 10 15 ^{20 25} 30 ID(A)
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DocID17740 Rev 9