STB34NM60N Datasheet, PDF (4/17 Pages) STMicroelectronics – Low gate input resistance

Electrical characteristics
2
Electrical characteristics
STB34NM60N, STP34NM60N
(T_CASE = 25 °C unless otherwise specified).
Symbol
Parameter
Table 4. On/off states
Test conditions
V_(BR)DSS
Drain-source breakdown
voltage (V_GS= 0)
I_DSS
Zero gate voltage drain
current (V_GS = 0)
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS(th) Gate threshold voltage
R_DS(on)
Static drain-source on-
resistance
I_D = 1 mA
V_DS = 600 V
V_DS = 600 V, Tc=125 °C
V_GS = ± 25 V
V_DS = V_GS, I_D = 250 µA
V_GS = 10 V, I_D= 14.5 A
Min. Typ. Max. Unit
600
V
1 µA
100 µA
±100 nA
2
3
4
V
0.092 0.105 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
- 2722 - pF
V_DS =100 V, f=1 MHz, V_GS=0 ^-
173
-
pF
- 1.75 - pF
C_oss
(1)
eq.
Equivalent capacitance time
related
V_GS = 0, V_DS = 0 to 480 V
- 458 - pF
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
R_G Intrinsic gate resistance
V_DD = 300 V, I_D = 15.75 A,
R_G=4.7 Ω, V_GS=10 V
(see Figure 19 and 14)
V_DD = 480 V, I_D = 31.5 A
V_GS =10 V
(see Figure 15)
f = 1 MHz, gate DC Bias=0
test signal level=20 mV
open drain
-
18
-
ns
-
36
-
ns
- 104 -
ns
-
73
-
ns
- 84 - nC
- 14 - nC
- 45 - nC
- 2.9 -
Ω
1. C_{oss eq}. is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS
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DocID17740 Rev 9