STB34NM60N Datasheet, PDF (1/17 Pages) STMicroelectronics – Low gate input resistance

STB34NM60N,
STP34NM60N
N-channel 600 V, 0.092 Ω, 31.5 A MDmesh™ II Power MOSFETs
in D²PAK and TO-220 packages
Datasheet - production data
Features
TAB
2
3
1
D²PAK
TAB
3
2
1
TO-220
Figure 1. Internal schematic diagram
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Order codes V_DSS
STB34NM60N
600 V
STP34NM60N
R_DS(on)
0.105 Ω
I_D
P_TOT
31.5 A 250 W
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
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Order codes
STB34NM60N
STP34NM60N
Table 1. Device summary
Marking
Packages
34NM60N
D²PAK
TO-220
Packaging
Tape and reel
Tube
March 2015
This is information on a product in full production.
DocID17740 Rev 9
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