STB24NM60N Datasheet, PDF (6/15 Pages) STMicroelectronics – N-channel 600 V, 0.168, 17 A MDmesh II Power MOSFET

Electrical characteristics
STB24NM60N
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
ID
(A)
10
OpeLri^a_mtiiotendin^{bythmisaaxreRaDSis(on)}
1
0.1
0.1
Tj=150°C
Tc=25°C
Sinlge
pulse
1
10
100
Figure 3.
AM07976v1
10µs
100µs
1ms
10ms
VDS(V)
Thermal impedance
Figure 4. Output characteristics
Figure 5. Transfer characteristics
ID
(A)
VGS = 10 V
AM07977v1
ID(A)
40
40
VGS = 7 V
VDS= 20 V
35
AM07978v2
30
30
VGS = 6 V
25
20
20
15
10
10
VGS = 5 V
5
0
0
5 10 15 20 25 VDS(V)
0
0
2
4
6
8 10 VGS(V)
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on resistance
VGS
(V)
12
VDS
10
VDD=480V
ID= 17A
8
6
4
2
0
0 10 20 30 40
AM07979v1
VGS ⁵⁰⁰
400
300
200
100
0
50 Qg(nC)
RDS(on)
(Ω)
0.176
0.174
0.172
0.170
0.168
0.166
0.164
0.162
0.160
0.158
0
VGS=10V
5
10
AM08534v1
15 ID(A)
6/15
Doc ID 010008 Rev 1