STB24NM60N Datasheet, PDF (3/15 Pages) STMicroelectronics – N-channel 600 V, 0.168, 17 A MDmesh II Power MOSFET

STB24NM60N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
dv/dt⁽²⁾
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
T_J
Operating junction temperature
T_stg Storage temperature
1. Pulse width limited by safe operating area.
2. I_SD ≤ 17 A, di/dt ≤ 400 A/µs, peak V_DS ≤V_(BR)DSS, V_DD = 80% V_(BR)DSS
Value
± 30
17
11
68
125
15
-55 to 150
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case max.
R_thj-pcb ⁽¹⁾ Thermal resistance junction-pcb max.
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Value
1
30
Table 4. Avalanche characteristics
Symbol
Parameter
I_AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by T_J max)
Single pulse avalanche energy
E_AS
(starting T_J = 25 °C, I_D = I_AS, V_DD = 50 V)
Value
6
300
Unit
V
A
A
A
W
V/ns
°C
Unit
°C/W
°C/W
Unit
A
mJ
Doc ID 010008 Rev 1
3/15