STB24NM60N Datasheet, PDF (1/15 Pages) STMicroelectronics – N-channel 600 V, 0.168, 17 A MDmesh II Power MOSFET

STB24NM60N
N-channel 600 V, 0.168 Ω, 17 A MDmesh™ II Power MOSFET
D²PAK
Features
Order codes
STB24NM60N
V_DSS
(@Tjmax)
650 V
R_DS(on)
max.
< 0.19 Ω
I_D
17 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
These N-channel 600 V Power MOSFET devices
are made using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a new vertical structure to
the company’s strip layout to yield one of the
world’s lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converter.
3
1
D²PAK
Figure 1. Internal schematic diagram
$
'
Table 1. Device summary
Order codes
STB24NM60N
Marking
24NM60N
3
!-V
Package
D²PAK
Packaging
Tape and reel
February 2011
Doc ID 010008 Rev 1
1/15
www.st.com
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