STB23NM60N Datasheet, PDF (6/19 Pages) STMicroelectronics – N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh™ Power MOSFET

Electrical characteristics
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD = 300 V, I_D = 9.5 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 18)
Min. Typ. Max. Unit
25
ns
15
ns
90
ns
36
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM(1)
V_SD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 19 A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD =19 A, di/dt =100 A/µs,
V_DD = 100 V
(see Figure 20)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
V_DD = 100 V
di/dt =100 A/µs, I_SD = 19 A
T_j = 150 °C (see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
19 A
76 A
1.3 V
470
ns
7
µC
29
A
600
ns
9
µC
29
A
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