STB23NM60N Datasheet, PDF (1/19 Pages) STMicroelectronics – N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh™ Power MOSFET

STB23NM60N-STF23NM60N
STI23NM60N-STP23NM60N-STW23NM60N
N-channel 600 V - 0.150 Ω - 19 A - D²PAK - I²PAK - TO-220/FP
TO-247, second generation MDmesh™ Power MOSFET
Features
Type
V_DSS
R_DS(on)
(@Tjmax) max
I_D
STB23NM60N
STI23NM60N
STF23NM60N
STP23NM60N
STW23NM60N
650 V
0.180 Ω
19 A
19 A
19 A ⁽¹⁾
19 A
19 A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
1
D²PAK
3
2
1
TO-220
123
I²PAK
3
2
1
TO-247
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STB23NM60N
STI23NM60N
STF23NM60N
STP23NM60N
STW23NM60N
Marking
23NM60N
23NM60N
23NM60N
23NM60N
23NM60N
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
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March 2008
Rev 3
1/19
www.st.com
19