STB23NM60N Datasheet, PDF (4/19 Pages) STMicroelectronics – N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh™ Power MOSFET

Electrical ratings
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
Table 4. Avalanche characteristics
Symbol
Parameter
I_AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
E_AS
(starting T_j= 25 °C, I_D = I_AS, V_DD = 50 V)
Max value
Unit
9
A
700
mJ
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