STB15NM60ND Datasheet, PDF (6/19 Pages) STMicroelectronics – N-channel 600 V - 0.27 Ω - 14 A - FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247

Electrical characteristics STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD = 300 V, I_D = 7 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 18)
Min Typ Max Unit
17
ns
20
ns
47
ns
28
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
I_SD
I_SDM ⁽¹⁾
V_SD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 14 A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD =14 A, di/dt =100 A/µs,
V_DD = 100 V
(see Figure 20)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
V_DD = 100 V
di/dt =100 A/µs, I_SD = 14 A
Tj = 150 °C (see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
14 A
56 A
1.3 V
148
ns
910
nC
12
A
190
ns
1280
nC
13
A
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