STB15NM60ND Datasheet, PDF (1/19 Pages) STMicroelectronics – N-channel 600 V - 0.27 Ω - 14 A - FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247

STB15NM60ND - STF/I15NM60ND
STP15NM60ND - STW15NM60ND
N-channel 600 V - 0.27 Ω - 14 A - FDmesh™ II Power MOSFET
D²PAK, I²PAK, TO-220, TO-220FP, TO-247
Features
Type
V_DSS (@Tjmax) R_DS(on) max I_D
STB15NM60ND
STF15NM60ND
STI15NM60ND
STP15NM60ND
STW15NM60ND
650 V
0.299 Ω
14 A
14 A
14 A⁽¹⁾
14 A
14 A
1. Limited only by maximum temperature allowed
■ The worldwide best R_DS(on)* area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
Application
■ Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.Strongly recommended for
bridge topologies, in ZVS phase-shift converters.
3
1
D²PAK
3
2
1
TO-220
3
2
1
TO-247
123
I²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB15NM60ND
STF15NM60ND
STI15NM60ND
STP15NM60ND
STW15NM60ND
15NM60ND
15NM60ND
15NM60ND
15NM60ND
15NM60ND
April 2008
Rev 2
Package
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
Packaging
Tape and reel
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