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STB15NM60ND Datasheet, PDF (5/19 Pages) STMicroelectronics – N-channel 600 V - 0.27 Ω - 14 A - FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247
STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND Electrical characteristics
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
600
dv/dt(1)
Drain-source voltage slope
VDD = 480 V,ID = 14 A,
VGS = 10 V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,@125 °C
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250 µA
3
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 7 A
V
30
V/ns
1 µA
100 µA
100 nA
4
5
V
0.27 0.299 Ω
1. Value measured at turn off under inductive load
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs(1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =15 V, ID= 7 A
VDS = 50 V, f =1 MHz,
VGS = 0
10
S
1250
pF
65
pF
5
pF
Coss
(2)
eq.
Equivalent output
capacitance
VGS = 0, VDS = 0V to 480 V
180
pF
f=1 MHz Gate DC Bias=0
Rg Gate input resistance
Test signal level=20 mV
4
Ω
open drain
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 480 V, ID = 14 A
VGS = 10 V
(see Figure 19)
40
nC
8
nC
22
nC
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
5/19