STB120N4LF6 Datasheet, PDF (6/18 Pages) STMicroelectronics – N-channel 40 V, 3.1 mΩ, 80 A DPAK, D²PAK STripFET™ VI DeepGATE™ Power MOSFET

Electrical characteristics
STB120N4LF6, STD120N4LF6
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3.
ID
(A)
100
OpLeimr^aittieodn
in
b^y
tmhi_asx^aRre^DaS(iosn)
10
Tj=175°C
Tc=25°C
Single pulse
AM08964v1
100µs
1ms
Thermal impedance
10ms
1
0.1
0.1
1
10
VDS(V)
Figure 4. Output characteristics
ID
(A)
350
VGS=10V
300
Figure 5.
AM08965v1
ID
(A)
Transfer characteristics
5V
300
VDS=2V
AM08966v1
250
4V
200
200
150
100
50
0
0
3V
0.5
1.0
1.5 VDS(V)
100
0
0
1
2
3
4 VGS(V)
Figure 6. Normalized B_VDSS vs temperature Figure 7. Static drain-source on resistance
BVDSS
(norm)
1.05
ID=1mA
AM08967v1
RDS(on)
(mΩ)
3.5
VGS=10V
AM08968v1
1.00
3.0
0.95
2.5
0.90
0.85
-75 -25 25 75 125 175 TJ(°C)
2.0
0
20
40
60
80 ID(A)
6/18
Doc ID 16919 Rev 2