STB120N4LF6 Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 40 V, 3.1 mΩ, 80 A DPAK, D²PAK STripFET™ VI DeepGATE™ Power MOSFET

STB120N4LF6
STD120N4LF6
N-channel 40 V, 3.1 mΩ, 80 A DPAK, D²PAK
STripFET™ VI DeepGATE™ Power MOSFET
Features
Order codes
STB120N4LF6
STD120N4LF6
V_DSS
40 V
40 V
R_DS(on) max
4.0 mΩ
4.0 mΩ
I_D
80 A
80 A
■ Logic level drive
■ 100% avalanche tested
Application
■ Switching applications
– Automotive
Description
This product is a 40 V N-channel STripFET™ VI
Power MOSFET based on the ST’s proprietary
STripFET™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest
RDS(on) in all packages.
3
1
DPAK
3
1
D²PAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STB120N4LF6
STD120N4LF6
Marking
120N4LF6
Packages
D²PAK
DPAK
Packaging
Tape and reel
February 2011
Doc ID 16919 Rev 2
1/18
www.st.com
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