STB120N4LF6 Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 40 V, 3.1 mΩ, 80 A DPAK, D²PAK STripFET™ VI DeepGATE™ Power MOSFET

Electrical characteristics
2
Electrical characteristics
STB120N4LF6, STD120N4LF6
(T_CASE = 25 °C unless otherwise specified)
Table 5. Static
Symbol
Parameter
V_(BR)DSS
Drain-source breakdown
Voltage
I_DSS
I_GSS
V_GS(th)
Zero gate voltage drain
current (V_GS = 0)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
R_DS(on)
Static drain-source on
resistance
Test conditions
I_D = 250 µA, V_GS= 0
V_DS = 20 V
V_DS = 20 V,Tc = 125 °C
V_GS = ± 20 V
V_DS = V_GS, I_D = 250 µA
V_GS = 5 V, I_D = 40 A
V_GS = 10 V, I_D = 40 A
Min. Typ.
40
-
-
-
1
-
3.6
3.1
Max. Unit
V
1 µA
10 µA
±100 nA
3
V
5.0 mΩ
4.0 mΩ
Table 6.
Symbol
Dynamic
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
R_G
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Intrinsic gate resistance
Test conditions
V_DS = 25 V, f=1 MHz,
V_GS = 0 V
V_DD = 20 V, I_D = 80 A
V_GS = 10 V
(see Figure 14)
f=1 MHz open drain
Min Typ. Max. Unit
4300
pF
-
650
- pF
375
pF
80
nC
-
15
- nC
15
nC
1.35
Ω
4/18
Doc ID 16919 Rev 2