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| STB11NK40Z_09 Datasheet, PDF (6/17 Pages) STMicroelectronics – N-channel 400 V, 0.49 Ω, 9 A, TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET | |||
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Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
STB11NK40Z, STP11NK40ZFP, STP11NK40Z
Test conditions
VDD=200 V, ID=4.5A,
RG=4.7â¦, VGS=10V
(see Figure 20)
VDD=200V, ID=4.5A,
RG=4.7â¦, VGS=10V
(see Figure 20)
VDD=320V, ID=9A,
RG=4.7â¦, VGS=10V
(see Figure 20)
Min. Typ. Max. Unit
20
ns
-
-
20
ns
40
ns
-
-
18
ns
15
ns
-
17
- ns
30
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD=9A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=9A,
di/dt = 100A/µs,
VDD=45V, Tj=150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5 %
Min. Typ. Max Unit
-
9
A
-
36 A
-
1.6 V
225
ns
- 1.6
µC
14
A
Table 9. Gate-source zener diode
Symbol
Parameter
Test conditions
BVGSO Gate-source breakdown voltage Igs=±1mA (open drain)
Min. Typ. Max. Unit
30
-
-
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the deviceâs ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the deviceâs
integrity. These integrated Zener diodes thus avoid the usage of external components.
6/17
Doc ID 8936 Rev 7
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