STB11NK40Z_09 Datasheet, PDF (5/17 Pages) STMicroelectronics – N-channel 400 V, 0.49 Ω, 9 A, TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET

STB11NK40Z, STP11NK40ZFP, STP11NK40Z
2
Electrical characteristics
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
V_(BR)DSS
Drain-source breakdown
voltage
I_DSS
Zero gate voltage drain
current (V_GS = 0)
I_GSS
V_GS(th)
R_DS(on)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
I_D = 1mA, V_GS= 0
V_DS = Max rating,
V_DS = Max rating @125°C
V_GS = ± 20V, V_DS = 0
V_DS= V_GS, I_D = 100µA
V_GS= 10V, I_D= 4.5A
Min.
400
3
Typ. Max. Unit
V
1 µA
50 µA
±10 µA
3.75 4.5 V
0.49 0.55 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs ⁽¹⁾ Forward transconductance ^V_DS ^{=15V, I}_D ^{= 4.5A}
-
5.8
-
S
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
930
pF
V_DS =25V, f=1 MHz, V_GS=0 -
140
-
pF
30
pF
C_oss
(2)
eq .
Equivalent output
capacitance
V_GS=0, V_DS =0V to 320V
-
78
-
pF
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD=320V, I_D = 9A
V_GS =10V
(see Figure 18)
32
nC
-
6
-
nC
18.5
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
inceases from 0 to 80% V_DSS
Doc ID 8936 Rev 7
5/17