STB11NK40Z_09 Datasheet, PDF (3/17 Pages) STMicroelectronics – N-channel 400 V, 0.49 Ω, 9 A, TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET

STB11NK40Z, STP11NK40ZFP, STP11NK40Z
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
I_D
I_DM(2)
P_TOT
Drain-source voltage (V_GS = 0)
Drain-gate voltage (R_GS = 20KΩ)
Gate-source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C=100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating factor
V_ESD(G-S)
dv/dt⁽³⁾
Gate source ESD (HBM-C= 100pF,
R= 1.5kΩ)
Peak diode recovery voltage slope
V_ISO Insulation withstand voltage (DC)
T_J
Operating junction temperature
T_stg
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤9A, di/dt ≤200 A/µs, V_DD ≤V_(BR)DSS, T_j ≤T_JMAX.
Value
TO-220/D²PAK
400
400
± 30
9
5.67
36
110
0.88
Unit
TO-220FP
9⁽¹⁾
5.67⁽¹⁾
36⁽¹⁾
30
0.24
V
V
V
A
A
A
W
W/°C
3500
V
4.5
--
2500
V/ns
V
-55 to 150
°C
Table 3. Thermal data
Symbol
Parameter
R_thj-case
R_thj-a
T_l
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Value
TO-220/D²PAK
1.14
62.5
Unit
TO-220FP
4.2
°C/W
°C/W
300
°C
Doc ID 8936 Rev 7
3/17