SD56120_06 Datasheet, PDF (6/15 Pages) STMicroelectronics – RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Typical performance
4
Typical performance
SD56120
Figure 2. Capacitance vs drain voltage
(per section)
Figure 3. Gate-source voltage vs case
temperature
C (pF)
1000
VGS (NORMALIZED)
1.04
100
10
1
0
Ciss
Coss
f = 1 MHz
per section
1.02
Id = 1 A
Id = 2 A
1 ^{Id = 3 A}
Id = 4 A
Id = 5 A
Crss
0.98
0.96
10
20
30
40
50
-25
0
Vds (V)
VDS = 10 V
per section
25
50
75
100
Tc (°C)
Figure 4. Drain current vs gate voltage
Id (A)
6
Figure 5. Output power vs input power
Pout (W)
140
5
4
3
2
1
Vds = 10 V
per section
0
2.5
3
3.5
4
4.5
5
Vgs (V)
120
100
80
60
40
20
0
0
VDD = 28 V
IDQ = 400 mA
f = 860 MHz
1
2
3
4
Pin (W)
6/15