SD56120_06 Datasheet, PDF(4/15 Page) STMicroelectronics – RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

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SD56120_06 Datasheet, PDF (4/15 Pages) STMicroelectronics – RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

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Electrical characteristics

SD56120

2.1

Note:

TCASE = +25 oC

Static

Table 3. Static (per section)

Symbol

Test conditions

V(BR)DSS

IDSS

IGSS

VGS(Q)

VDS(ON)

GFS

CISS

COSS

CRSS

VGS = 0 V

VGS = 20 V

VDS = 28 V

VGS = 10 V

VDS = 10 V

VGS = 0 V

IDS = 1 mA

VDS = 28 V

VDS = 0 V

ID = 200 mA

ID = 3 A

VDS = 28 V

REF. 7194566A

f = 1 MHz

Min Typ Max Unit

1 ÂµA

3.0

5.0 V

0.7 0.8 V

mho

2.8

2.2

Note:

Dynamic

Table 4. Dynamic

Symbol

Test conditions

Min Typ Max Unit

POUT VDD = 28 V IDQ = 400 mA f = 860 MHz

100

GPS VDD = 28 V IDQ = 400 mA POUT = 100 W f = 860 MHz 14

Î·D

VDD = 28 V IDQ = 400 mA POUT = 100 W f = 860 MHz 50

GPS VDD = 28 V IDQ = 400 mA POUT = 100 W PEP

VDD = 28 V IDQ = 400 mA POUT = 100 W PEP

IMD VDD = 28 V IDQ = 400 mA POUT = 100 W PEP

-28

Load VDD = 28 V IDQ = 400 mA POUT = 100 W f = 860 MHz 5:1

mismatch All phase angles

dBt

VSWR

f1 = 860 MHz

PEP f2 = 860.1 MHz

4/15

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