SD56120_06 Datasheet, PDF (1/15 Pages) STMicroelectronics – RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

SD56120
RF POWER Transistors, LDMOST plastic family
N-Channel enhancement-mode lateral MOSFETs
General features
■ Excellent thermal stability
■ Common source configuration Push-pull
■ P_OUT = 100W with 14dB gain @ 860MHz
■ BeO free package
Description
The SD56120 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0GHz. The SD56120 is designed for high gain
and broadband performance operating in
common source mode at 28 V. It is ideal for
broadcast applications from 470 to 860 MHz
requiring high linearity.
M246
Epoxy sealed
Pin connection
1
2
Order codes
Part number
SD56120
July 2006
5
1-2 Drain
4-5 Gate
4
3 Source
Package
M246
Branding
TSD56120
Rev 3
1/15
www.st.com
15