PD54003-E_10 Datasheet, PDF (6/27 Pages) STMicroelectronics – RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Typical performance
4
Typical performance
PD54003-E, PD54003S-E
Figure 3. Capacitance vs. drain voltage
1000
f = 1 M Hz
100
C is s
Coss
10
Crss
1
0
5
10
VDD, DRAIN VOLTAGE (V)
Figure 5. Gate-source voltage vs. case
temperature
Figure 4. Drain current vs. gate voltage
4
3
2
1
0
15
1
Vds = 10 V
2
3
4
5
6
VGS, GATE-SOURCE VOLTAGE (V)
6/27
Doc ID 12235 Rev 2