PD54003-E_10 Datasheet, PDF(4/27 Page) STMicroelectronics – RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

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PD54003-E_10 Datasheet, PDF (4/27 Pages) STMicroelectronics – RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

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Electrical characteristics

PD54003-E, PD54003S-E

2.1

TCASE = +25 oC

Static

Table 4. Static

Symbol

IDSS

IGSS

VGS(Q)

VDS(ON)

gFS

CISS

COSS

CRSS

VGS = 0

VGS = 20 V

VDS = 10 V

VGS = 10 V

VDS = 10 V

VGS = 0

Test conditions

VDS = 25 V

VDS = 0

ID = 50 mA

ID = 1 A

ID = 3.2 A

VDS = 7.5 V

f = 1 MHz

Min. Typ. Max. Unit

1 ÂµA

2.0

5.0 V

1.3 V

1.7

mho

4.0

2.2

Dynamic

Table 5. Dynamic

Symbol

Test conditions

POUT VDD = 7.5 V, IDQ = 50 mA

f = 500 MHz

GPS VDD = 7.5 V, IDQ = 50 mA, POUT = 3 W, f = 500 MHz

VDD = 7.5 V, IDQ = 50 mA, POUT = 3 W, f = 500 MHz

Load VDD = 9.5 V, IDQ = 50 mA, POUT = 3 W, f = 500 MHz

mismatch All phase angles

Min. Typ. Max. Unit

10 12

50 55

20:1

VSWR

2.3

Moisture sensitivity level

Table 6.

Moisture sensitivity level

Test methodology

J-STD-020B

Rating

MSL 3

4/27

Doc ID 12235 Rev 2

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