PD54003-E_10 Datasheet, PDF (1/27 Pages) STMicroelectronics – RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

PD54003-E
PD54003S-E
RF POWER transistor, LdmoST plastic family
N-channel enhancement-mode, lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ P_OUT = 3 W with 12dB gain @ 500 MHz
■ New RF plastic package
Description
The device is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 7 V in common source mode at
frequencies of up to 1 GHz. The device features
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology, the PowerSO-10RF.
The superior linearity performance makes it an
ideal solution for portable radios. The PowerSO-
10RF is the first true surface-mount device (SMD)
plastic RF power package. It is based on the
highly reliable PowerSO-10, the first ST-
originated, JEDEC-approved, high-power SMD
package. It has been optimized specifically for RF
requirements, and offers excellent RF
performance as well as ease of assembly.
surface-mount recommendations are available in
application note AN1294 (see www.st.com/rf).
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Figure 1. Pin connection
Source
Gate
Drain
Table 1. Device summary
Order code
PD54003-E
PD54003S-E
PD54003TR-E
PD54003STR-E
Package
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
May 2010
Doc ID 12235 Rev 2
Packing
Tube
Tube
Tape and reel
Tape and reel
1/27
www.st.com
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