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| STM32F100VCT6 Datasheet, PDF (52/98 Pages) STMicroelectronics – High-density value line, advanced ARM-based 32-bit MCU with 256 to 512 KB Flash, 16 timers, ADC, DAC & 11 comm interfaces | |||
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Electrical characteristics
STM32F100xC, STM32F100xD, STM32F100xE
Figure 14. Typical application with a 32.768 kHz crystal
Resonator with
integrated capacitors
CL1
OSC32_IN
32.768 KH z
resonator
RF
OSC32_OU T
CL2
Bias
controlled
gain
fLSE
STM32F10xxx
ai14129b
5.3.7
Internal clock source characteristics
The parameters given in Table 24 are derived from tests performed under the ambient
temperature and VDD supply voltage conditions summarized in Table 9.
High-speed internal (HSI) RC oscillator
Table 24. HSI oscillator characteristics(1)
Symbol
Parameter
Conditions
Min Typ Max Unit
fHSI Frequency
ACCHSI Accuracy of HSI oscillator
8
TA = â40 to 105 °C(2) -2.4
TA = â10 to 85 °C(2) -2.2
TA = 0 to 70 °C(2)
-1.9
MHz
2.5 %
1.3 %
1.3 %
TA = 25 °C
tsu(HSI)(3) HSI oscillator startup time
IDD(HSI)(3) HSI oscillator power consumption
-1
1
%
1
2
µs
80 100 µA
1. VDD = 3.3 V, TA = â40 to 105 °C °C unless otherwise specified.
2. Based on characterization, not tested in production.
3. Guaranteed by design. Not tested in production
Low-speed internal (LSI) RC oscillator
Table 25. LSI oscillator characteristics (1)
Symbol
Parameter
Min
fLSI
Frequency
30
tsu(LSI)(2) LSI oscillator startup time
IDD(LSI)(2) LSI oscillator power consumption
1. VDD = 3 V, TA = â40 to 105 °C °C unless otherwise specified.
2. Guaranteed by design, not tested in production.
Typ
40
0.65
Max
Unit
60
kHz
85
µs
1.2
µA
52/98
Doc ID 15081 Rev 7
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