STTH8R04 Datasheet, PDF (5/11 Pages) STMicroelectronics – Ultrafast recovery diode

STTH8R04
Characteristics
Figure 9.
Relative variations of dynamic
parameters versus junction
temperature
1.4 ^{QRR [Tj]/QRR [Tj = 125° C] and IRM [Tj]/IRM [Tj = 125° C]}
I_F= 8 A
V_R=320 V
1.2
1.0
0.8
I_RM
0.6
Q_RR
0.4
0.2
T_j(°C)
0.0
25
50
75
100
125
150
Figure 10. Transient peak forward voltage
versus dI_F/dt (typical values)
V_Fp(V)
5.0
4.5
I_F=8 A
T_j=125 °C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
dI_F/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 11. Forward recovery time versus dI_F/dt Figure 12. Junction capacitance versus
(typical values)
reverse voltage applied (typical
values)
t_FR(ns)
700
600
500
I_F=8 A
V_FR=1.1 x V_F max.
T_j=125°C
C(pF)
100
F=1MHz
V_OSC=30mV_RMS
T_j=25°C
400
300
200
100
0
0
dI_F/dt(A/µs)
10
100
200
300
400
500
1
V_R(V)
10
100
1000
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