STTH8R04 Datasheet, PDF (3/11 Pages) STMicroelectronics – Ultrafast recovery diode

STTH8R04
Characteristics
Table 4.
Symbol
Dynamic characteristics
Parameter
t_rr
Reverse recovery time
I_RM Reverse recovery current
S Softness factor
t_fr
Forward recovery time
V_FP Forward recovery voltage
Test conditions
I_F = 1 A, dI_F/dt = -50 A/µs,
V_R = 30 V, T_j = 25° C
I_F = 1 A, dI_F/dt = -100 A/µs,
V_R = 30 V, T_j = 25° C
I_F = 8 A, dI_F/dt = -200 A/µs,
V_R = 320 V, T_j = 125° C
I_F = 8 A, dI_F/dt = -200 A/µs,
V_R = 320 V, T_j = 125° C
I_F = 8 A, dI_F/dt = 100 A/µs
V_FR = 1.1 x V_Fmax, T_j = 25° C
I_F = 8 A, dI_F/dt = 100 A/µs
Min Typ Max Unit
35 50
ns
25 35
5.5 8
A
0.4
150 ns
2.9
V
Figure 1. Conduction losses versus
average current
P(W)
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
1
δ=0.05
2
3
δ=0.1
δ=0.2
I_F(AV)(A)
4
5
6
δ=0.5
δ=1
T
δ=tp/T
tp
7
8
9 10 11
Figure 2. Forward voltage drop versus
forward current
I_FM(A)
200
180
160
T_J=150°C
(Maximum values)
140
120
100
T_J=150°C
(Typical values)
80
60
40
T_J=25°C
20
(Maximum values)
V_FM(V)
0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
Figure 3.
Relative variation of thermal
impedance junction to case
versus pulse duration
Zth_(j-c)/Rth_(j-c)
1.0
Single pulse
TO-220AC
TO-220AC Ins
D²PAK
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration TO-220FPAB
Zth_(j-c)/Rth_(j-c)
1.0
Single pulse
TO-220FPAB
0.1
0.1
1.E-03
tp(s)
1.E-02
1.E-01
1.E+00
0.0
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
1.E+01
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