STTH8R04 Datasheet, PDF (2/11 Pages) STMicroelectronics – Ultrafast recovery diode

Characteristics
1
Characteristics
STTH8R04
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol
Parameter
Value Unit
V_RRM Repetitive peak reverse voltage
400
V
V_RSM Repetitive peak reverse voltage
I_F(RMS) RMS forward current
TO-220AC / D²PAK / TO220FPAC
TO220AC Ins
400
V
30
A
20
TO-220AC / D²PAK T_c = 145° C
I_F(AV) Average forward current, δ = 0.5
TO220FPAC
T_c = 110° C
8
A
TO220AC Ins
T_c = 115° C
I_FRM Repetitive peak forward current
t_p = 10 µs, F = 1 kHz
165
A
I_FSM Surge non repetitive forward current t_p = 10 ms Sinusoidal
120
A
T_stg Storage temperature range
-65 to +175 ° C
T_j
Operating junction temperature range
-40 to +175 ° C
Table 2. Thermal parameters
Symbol
R_th(j-c)
Junction to case
Parameter
TO-220AC / D²PAK
TO220FPAC
TO220AB Ins
Value
2.5
6
5.5
Unit
°C/W
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ Max. Unit
I_R(1) Reverse leakage current
V_F(2) Forward voltage drop
T_j = 25° C
T_j = 125° C
T_j = 25° C
T_j = 100° C
V_R = V_RRM
I_F = 8 A
T_j = 150° C
1. Pulse test: t_p = 5 ms, δ < 2 %
2. Pulse test: t_p = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation:
P = 0.83 x I_F(AV) + 0.034 x I_F²_(RMS)
10
µA
10 100
1.5
1.05 1.3
V
0.9 1.1
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